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  ? semiconductor components industries, llc, 2013 december, 2013 ? rev. 6 1 publication order number: ntzd5110n/d ntzd5110n small signal mosfet 60 v, 310 ma, dual n?channel with esd protection, sot?563 features ? low r ds(on) improving system efficiency ? low threshold voltage ? esd protected gate ? small footprint 1.6 x 1.6 mm ? these are pb?free devices applications ? load/power switches ? driver circuits: relays, lamps, displays, memories, etc. ? battery management/battery operated systems ? cell phones, digital cameras, pdas, pagers, etc. maximum ratings (t j = 25 c unless otherwise noted.) parameter symbol value unit drain?to?source v oltage v dss 60 v gate?to?source v oltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 294 ma t a = 85 c 212 power dissipation (note 1) steady state p d 250 mw continuous drain current (note 1) t  5 s t a = 25 c i d 310 ma t a = 85 c 225 power dissipation (note 1) t  5 s p d 280 mw pulsed drain current t p = 10  s i dm 590 ma operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s 350 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c gate?source esd rating (hbm, method 3015) esd 1800 v thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r  ja 500 c/w junction?to?ambient ? t  5 s (note 1) 447 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu. area = 1.127 in sq [1 oz] including traces). sot?563 case 463a marking diagram http://onsemi.com v (br)dss r ds(on) max i d max 60 1.6  @ 10 v 2.5  @ 4.5 v 310 ma 1 6 s7 = specific device code m = date code s7m   top view d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 d 2 pinout: sot?563 d1 s1 g1 d2 s2 g2 n?channel mosfet see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information (note: microdot may be in either location)
ntzd5110n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted.) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250  a 60 ? ? v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j ? ? 71 ? mv/ c zero gate voltage drain current i dss v gs = 0 v v ds = 60 v t j = 25 c ? ? 1.0  a t j = 125 c ? ? 500 v gs = 0 v v ds = 50 v t j = 25 c ? ? 100 na t j = 85 c ? ? 100 gate?to?source leakage current i gss v ds = 0 v, v gs =  20 v ? ?  10  a v ds = 0 v, v gs =  10 v ? ? 450 na v ds = 0 v, v gs =  5.0 v ? ? 150 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250  a 1.0 ? 2.5 v negative threshold temperature coefficient v gs(th) /t j ? ? 4.0 ? mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 50 0 m a ? 1.19 1.6  v gs = 4 .5 v, i d = 2 00 m a ? 1.33 2.5 forward transconductance g fs v ds = 5.0 v, i d = 20 0 m a ? 80 ? s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 20 v ? 24.5 ? pf output capacitance c oss ? 4.2 ? reverse transfer capacitance c rss ? 2.2 ? total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v; i d = 200 m a ? 0.7 ? nc threshold gate charge q g(th) ? 0.1 ? gate?to?source charge q gs ? 0.3 ? gate?to?drain charge q gd ? 0.1 ? switching characteristics (note 4) turn?on delay time t d(on) v gs = 10 v, v dd = 30 v, i d = 200 ma, r g = 10  ? 12 ? ns rise time t r ? 7.3 ? turn?off delay time t d(off) ? 63.7 ? fall time t f ? 30.6 ? drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 20 0 ma t j = 25 c ? 0.8 1.2 v t j = 85 c ? 0.7 ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. surface?mounted on fr4 board using 1 in. sq. pad size (cu. area = 1.127 in sq [1 oz] including traces). 3. pulse test: pulse width  300  s, duty cycle  2%. 4. switching characteristics are independent of operating junction temperatures.
ntzd5110n http://onsemi.com 3 typical characteristics 5.0 v figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 6 4 2 0 0 0.4 0.8 1.2 1.6 6 4 2 0 0 0.4 0.8 1.2 figure 3. on?resistance vs. drain current and temperature figure 4. on?resistance vs. drain current and temperature i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 3.2 figure 5. on?resistance vs. gate?to?source voltage figure 6. on?resistance variation with temperature v gs , gate?t o?source voltage (v) t j , junction temperature ( c) 10 8 6 4 2 0.4 0.8 1.6 2.4 125 100 75 50 25 0 ?25 ?50 0.6 1.0 1.4 1.8 2.2 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance (  ) r ds(on) , drain?to?source resistance (  ) r ds(on) , drain?to?source resistance (normalized) v gs = 10 v 7.0 v 8.0 v 9.0 v 4.5 v 4.0 v 6.0 v 3.5 v 3.0 v 2.5 v t j = ?55 c t j = 125 c t j = 25 c t j = ?55 c t j = 125 c t j = 25 c t j = 85 c v gs = 4.5 v i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.8 1.6 2.4 3.2 r ds(on) , drain?to?source resistance (  ) t j = ?55 c t j = 125 c t j = 25 c t j = 85 c v gs = 10 v i d = 500 ma i d = 200 ma 150 i d = 0.2 a v gs = 4.5 v v gs = 10 v 1.2 2.0 2.4 2.8 0.4 1.2 2.0 2.8
ntzd5110n http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge qg, total gate charge (nc) 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 figure 9. diode forward voltage vs. current v sd , source?to?drain voltage (v) 1.2 1.0 0.8 0.6 0.4 0.01 1 10 v gs , gate?t o?source voltage (v) i s , source current (a) t j = 25 c i d = 0.2 a 20 16 12 8 4 0 0 10 20 30 c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v gate?to?source or drain?t o?source voltage (v) t j = 25 c t j = 85 c v gs = 0 v 0.1 ordering information device package shipping ntzd5110nt1g sot?563 (pb?free) 4000 / tape & reel NTZD5110NT5G sot?563 (pb?free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging spe- cifications brochure, brd8011/d.
ntzd5110n http://onsemi.com 5 package dimensions sot?563, 6 lead case 463a issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197  mm inches  scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntzd5110n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative


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